| PART |
Description |
Maker |
| 450AA001M08 450AA001M10 450AA001M12 450AS001M10 45 |
Connector Designator A Rotatable Coupling
|
Glenair, Inc.
|
| 450FA001M20 450FA001M22 450FA001M24 450FA001M10 45 |
Connector Designator F Rotatable Coupling
|
Glenair, Inc.
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| 0917160018 SD-91716-001 91716-0018 |
2.50mm (.098) Appli-Mate RAST 2.5 IDT Housing, Direct/Indirect, Female, 3 Circuits, Removed
MOLEX Connector
|
Molex Electronics Ltd.
|
| 0917160549 91716-0549 |
2.50mm (.098) Appli-Mate RAST 2.5 IDT Housing, Direct/Indirect, Female, 4 Circuits, Removed Position
MOLEX Connector
|
Molex Electronics Ltd.
|
| CYW134MOXC CYW134MOXCT CYW134SOXC CYW134SOXCT W134 |
Direct Rambus?Clock Generator
Direct Rambus⑩ Clock Generator
Direct Rambus垄芒 Clock Generator
Direct Rambus Clock Generator
|
Cypress Semiconductor
|
| 0917173001 91717-3001 |
5.00mm (.197) Pitch Appli-Mate RAST 2.5 IDT Housing, Direct/Indirect, Female, 5 Circuits, Fully Coded
5.00mm (.197") Pitch Appli-Mate RAST 2.5 IDT Housing, Direct/Indirect, Female, 5 Circuits, Fully Coded
MOLEX Connector
|
Molex Electronics Ltd.
|
| 0917160001 91716-0001 SD-91716-001 |
2.50mm (.098) Pitch Appli-Mate RAST 2.5 IDT Housing, Direct/Indirect, Female, 3 Circuits, Fully Coded
2.50mm (.098") Pitch Appli-Mate RAST 2.5 IDT Housing, Direct/Indirect, Female, 3 Circuits, Fully Coded
MOLEX Connector
|
Molex Electronics Ltd.
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128FKK8K-840 MC-4R128FKK8K |
128MB 32-bit Direct Rambus DRAM RIMM Module 128MB2位直接Rambus的内存RIMM的模
128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W23402 W234 W234X |
Dual Direct Rambus™ Clock Generator
Dual Direct Rambus垄芒 Clock Generator
Dual Direct Rambus Clock Generator
|
Cypress Semiconductor
|
